Other articles related with "radiation effect":
106103 Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞)
  Lattice damage in InGaN induced by swift heavy ion irradiation
    Chin. Phys. B   2022 Vol.31 (10): 106103-106103 [Abstract] (272) [HTML 0 KB] [PDF 1242 KB] (49)
64211 Shen Tan(谭深), Yan Li(李彦), Hao-Shi Zhang(张浩石), Xiao-Wei Wang(王晓伟), and Jing Jin(金靖)
  Loss prediction of three-level amplified spontaneous emission sources in radiation environment
    Chin. Phys. B   2022 Vol.31 (6): 64211-064211 [Abstract] (311) [HTML 1 KB] [PDF 954 KB] (22)
57102 Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生)
  Evolution of optical properties and molecular structure of PCBM films under proton irradiation
    Chin. Phys. B   2022 Vol.31 (5): 57102-057102 [Abstract] (302) [HTML 0 KB] [PDF 2543 KB] (50)
40701 Caihong Jia(贾彩红), Min Cao(曹敏), Tingting Ji(冀婷婷), Dawei Jiang(蒋大伟), and Chunxiao Gao(高春晓)
  Investigating the thermal conductivity of materials by analyzing the temperature distribution in diamond anvils cell under high pressure
    Chin. Phys. B   2022 Vol.31 (4): 40701-040701 [Abstract] (440) [HTML 1 KB] [PDF 1019 KB] (41)
36103 Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华)
  Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors
    Chin. Phys. B   2022 Vol.31 (3): 36103-036103 [Abstract] (363) [HTML 1 KB] [PDF 1500 KB] (212)
56111 Shijun Zhao(赵仕俊)
  Influence of temperature and alloying elements on the threshold displacement energies in concentrated Ni-Fe-Cr alloys
    Chin. Phys. B   2021 Vol.30 (5): 56111-056111 [Abstract] (464) [HTML 1 KB] [PDF 3382 KB] (126)
16103 J Assaf
  Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation
    Chin. Phys. B   2018 Vol.27 (1): 16103-016103 [Abstract] (548) [HTML 1 KB] [PDF 1198 KB] (237)
96102 Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉)
  Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
    Chin. Phys. B   2017 Vol.26 (9): 96102-096102 [Abstract] (667) [HTML 0 KB] [PDF 551 KB] (264)
86202 Li-Ying Tan(谭丽英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)
  Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector
    Chin. Phys. B   2017 Vol.26 (8): 86202-086202 [Abstract] (571) [HTML 1 KB] [PDF 439 KB] (228)
86201 Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)
  Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique
    Chin. Phys. B   2017 Vol.26 (8): 86201-086201 [Abstract] (438) [HTML 1 KB] [PDF 782 KB] (272)
86103 Zeng Jian (曾健), Liu Jie (刘杰), Zhang Sheng-Xia (张胜霞), Zhai Peng-Fei (翟鹏飞), Yao Hui-Jun (姚会军), Duan Jing-Lai (段敬来), Guo Hang (郭航), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅)
  Irradiation effects of graphene and thin layer graphite induced by swift heavy ions
    Chin. Phys. B   2015 Vol.24 (8): 86103-086103 [Abstract] (677) [HTML 1 KB] [PDF 1153 KB] (465)
14206 Jin Jing (金靖), Lin Song (林松), Song Ning-Fang (宋凝芳)
  Irradiation effect on strain sensitivity coefficient of strain sensing fiber Bragg gratings
    Chin. Phys. B   2014 Vol.23 (1): 14206-014206 [Abstract] (602) [HTML 1 KB] [PDF 415 KB] (364)
104211 Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群)
  Incident particle range dependence of radiation damage in a power bipolar junction transistor
    Chin. Phys. B   2012 Vol.21 (10): 104211-104211 [Abstract] (1047) [HTML 1 KB] [PDF 503 KB] (627)
80703 Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 )
  Effect of bias condition on heavy ion radiation in bipolar junction transistor
    Chin. Phys. B   2012 Vol.21 (8): 80703-080703 [Abstract] (1484) [HTML 1 KB] [PDF 171 KB] (702)
66103 Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭)
  Degradation mechanisms of current gain in NPN transistors
    Chin. Phys. B   2010 Vol.19 (6): 66103-066103 [Abstract] (1537) [HTML 1 KB] [PDF 268 KB] (1911)
56103 Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭)
  Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons
    Chin. Phys. B   2010 Vol.19 (5): 56103-056103 [Abstract] (1212) [HTML 1 KB] [PDF 2089 KB] (1093)
3760 Li Dong-Mei(李冬梅), Wang Zhi-Hua(王志华), Huangfu Li-Ying(皇甫丽英), and Gou Qiu-Jing(勾秋静),
  Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology
    Chin. Phys. B   2007 Vol.16 (12): 3760-3765 [Abstract] (1413) [HTML 1 KB] [PDF 991 KB] (1642)
792 Zhang En-Xia (张恩霞), Qian Cong (钱聪), Zhang Zheng-Xuan (张正选), Lin Cheng-Lu (林成鲁), Wang Xi (王曦), Wang Ying-Min (王英民), Wang Xiao-He(王晓荷), Zhao Gui-Ru (赵桂茹), En Yun-Fei (恩云飞), Luo Hong-Wei (罗宏伟), Shi Qian (师谦)
  Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
    Chin. Phys. B   2006 Vol.15 (4): 792-797 [Abstract] (1576) [HTML 1 KB] [PDF 325 KB] (683)
948 Zhang Guo-Qiang (张国强), Guo Qi (郭旗), Erkin (艾尔肯), Lu Wu (陆妩), Ren Di-Yuan (任迪远)
  A novel technique for predicting ionizing radiation effects of commercial MOS devices
    Chin. Phys. B   2004 Vol.13 (6): 948-953 [Abstract] (1103) [HTML 0 KB] [PDF 182 KB] (454)
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